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Integration of vertical InAs nanowire arrays on insulator-on-silicon for electrical isolation
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10.1063/1.3013566
/content/aip/journal/apl/93/20/10.1063/1.3013566
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/20/10.1063/1.3013566
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Figures

Image of FIG. 1.
FIG. 1.

[(a)–(d)] Process flow for ion implantation induced transfer layer to . (e) Cross-sectional FE-SEM image of the transferred InAs layer to .

Image of FIG. 2.
FIG. 2.

AFM topograph images of InAs on (a) directly after ion-cut induced transfer and (b) after wet etching of damaged layer and OMVPE thin film growth. (c) cross-sectional FE-SEM at the base of an InAs NW grown on . Inset is FE-SEM image of InAs NWs grown on .

Image of FIG. 3.
FIG. 3.

(a) FE-SEM image of ordered InAs NW arrays grown on . (b) angle-view FE-SEM images of vertical and electrically isolated InAs NWs on . (c) Zoom-in FE-SEM image of an InAs NW with an InAs island at its base, sitting on substrate and electrically isolated from other NWs for individual NW addressing.

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/content/aip/journal/apl/93/20/10.1063/1.3013566
2008-11-20
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Integration of vertical InAs nanowire arrays on insulator-on-silicon for electrical isolation
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/20/10.1063/1.3013566
10.1063/1.3013566
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