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quantum dot laser fabricated on GaAs substrate by droplet epitaxy
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10.1063/1.3026174
/content/aip/journal/apl/93/20/10.1063/1.3026174
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/20/10.1063/1.3026174
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Figures

Image of FIG. 1.
FIG. 1.

(a) AFM image of GaAs QDs. Scan area is . [(b) and (c)] Cross-sectional HAADF-STEM images of the capped GaAs QDs. (b) High and (c) low magnifications.

Image of FIG. 2.
FIG. 2.

PL spectra of an ensemble of QDs measured at (upper) and RT (middle). For reference, PL spectrum at of an ensemble of QDs formed on (100) surface is shown in gray line (lower).

Image of FIG. 3.
FIG. 3.

[(a) and (c)] Emission spectra taken from the cleaved side with varying excitation power at 77 K (5, 13, 19, 24, and ) and at 300 K (306, 452, 559, 705, and ). (b) Integrated emission intensity at as a function of excitation power. (d) Threshold power of lasing as a function of temperature. The dotted line in (d) shows the fit according to the characteristic temperatuare of 68 K.

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/content/aip/journal/apl/93/20/10.1063/1.3026174
2008-11-20
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: GaAs∕AlGaAs quantum dot laser fabricated on GaAs (311)A substrate by droplet epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/20/10.1063/1.3026174
10.1063/1.3026174
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