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Epitaxial growth of high mobility thin films and application to -channel thin film transistor
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) Relationships among growth condition, phases, and Hall mobility of the thin films on etched (100) MgO and (b) unetched (110) MgO substrates. The film thickness was . The ellipsoidal area in (b) indicates the optimum growth conditions where single phase films with high hole mobilities were obtained. (c) AFM images of films grown on (110) MgO at by varying substrate temperature from 650 to .

Image of FIG. 2.
FIG. 2.

(a) HR-XRD out-of-plane pattern ( scan) of the film grown on (110) MgO at the optimum growth condition, and . Inset shows a 220 rocking curve. (b) In-plane pattern of scan and rocking curves (inset).

Image of FIG. 3.
FIG. 3.

Temperature dependences of (a) Hall mobility and (b) hole concentration for a 650-nm-thick (110) epitaxial film grown at the optimum condition (circles). Those of a 100-nm-thick (100) epitaxial film (large squares) and a bulk single crystal (small squares) are also shown for comparison (Ref. 3).

Image of FIG. 4.
FIG. 4.

(a) Transfer characteristic and gate leakage current , and (b) field-effect mobility of a (100) channel TFT at .


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Epitaxial growth of high mobility Cu2O thin films and application to p-channel thin film transistor