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(a) Relationships among growth condition, phases, and Hall mobility of the thin films on etched (100) MgO and (b) unetched (110) MgO substrates. The film thickness was . The ellipsoidal area in (b) indicates the optimum growth conditions where single phase films with high hole mobilities were obtained. (c) AFM images of films grown on (110) MgO at by varying substrate temperature from 650 to .
(a) HR-XRD out-of-plane pattern ( scan) of the film grown on (110) MgO at the optimum growth condition, and . Inset shows a 220 rocking curve. (b) In-plane pattern of scan and rocking curves (inset).
Temperature dependences of (a) Hall mobility and (b) hole concentration for a 650-nm-thick (110) epitaxial film grown at the optimum condition (circles). Those of a 100-nm-thick (100) epitaxial film (large squares) and a bulk single crystal (small squares) are also shown for comparison (Ref. 3).
(a) Transfer characteristic and gate leakage current , and (b) field-effect mobility of a (100) channel TFT at .
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