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Improving light output power of InGaN-based light emitting diodes with pattern-nanoporous -type GaN:Mg surfaces
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) The microscopy image of the patterned nanoporous LED. The SEM micrographs of the patterned nanoporous structure are shown in (b) and (c) with 85–95 nm porous sizes. (d) The cross sectional image of the nanoporous LED was observed at the tilted angle. The ITO TCL layer, mesa edge region, mesa sidewall, and ICP-etched n-type GaN:Si surface were observed in this SEM micrograph.

Image of FIG. 2.
FIG. 2.

The peak wavelengths of the EL emission spectrums of the conventional, nanoporous and pattern-nanoporous LEDs are measured as 461.2 nm, 459.6 and 460.1 nm at the 20 mA operation current.

Image of FIG. 3.
FIG. 3.

(a) The current-voltage characteristics and (b) the light output power as a function of operating current for all the LED samples are measured at room temperature.

Image of FIG. 4.
FIG. 4.

(a) The schematic diagram of the current spreading process and light extraction process of the pattern-nanoporous LED. The EL microscopy images of the pattern-nanoporous LED are observed in (b) at 0.06 mA and in (c) at 0.2 mA operating currents.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Improving light output power of InGaN-based light emitting diodes with pattern-nanoporous p-type GaN:Mg surfaces