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Achieving a low interfacial density of states in atomic layer deposited on
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10.1063/1.3027476
/content/aip/journal/apl/93/20/10.1063/1.3027476
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/20/10.1063/1.3027476
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/content/aip/journal/apl/93/20/10.1063/1.3027476
2008-11-19
2014-09-02
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Achieving a low interfacial density of states in atomic layer deposited Al2O3 on In0.53Ga0.47As
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/20/10.1063/1.3027476
10.1063/1.3027476
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