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Achieving a low interfacial density of states in atomic layer deposited on
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10.1063/1.3027476
/content/aip/journal/apl/93/20/10.1063/1.3027476
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/20/10.1063/1.3027476
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Cross-sectional HRTEM on after rapid thermal annealing. (b) Top and (c) cross-sectional schematic views of a structure designed for the charge pumping measurement.

Image of FIG. 2.
FIG. 2.

(a) characteristics of a MOSCAP after rapid thermal annealing for 15 s in He. The inset shows hysteresis of loops at different frequencies. (b) relationship extracted from quasistatic curve and the definition of Fermi-level movement, .

Image of FIG. 3.
FIG. 3.

Charge pumping current as a function of gate pulse with frequency dependence. The inset shows vs frequency under different voltages measured by the conductance method.

Image of FIG. 4.
FIG. 4.

(a) Profile of the volume densities of bulk traps in as a function of distance from the surface. (b) Energy dependence of interfacial densities of states in .

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/content/aip/journal/apl/93/20/10.1063/1.3027476
2008-11-19
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Achieving a low interfacial density of states in atomic layer deposited Al2O3 on In0.53Ga0.47As
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/20/10.1063/1.3027476
10.1063/1.3027476
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