Full text loading...
(a) Cross-sectional HRTEM on after rapid thermal annealing. (b) Top and (c) cross-sectional schematic views of a structure designed for the charge pumping measurement.
(a) characteristics of a MOSCAP after rapid thermal annealing for 15 s in He. The inset shows hysteresis of loops at different frequencies. (b) relationship extracted from quasistatic curve and the definition of Fermi-level movement, .
Charge pumping current as a function of gate pulse with frequency dependence. The inset shows vs frequency under different voltages measured by the conductance method.
(a) Profile of the volume densities of bulk traps in as a function of distance from the surface. (b) Energy dependence of interfacial densities of states in .
Article metrics loading...