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Raman characterization of Ge distribution in individual alloy nanowires
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10.1063/1.3028027
/content/aip/journal/apl/93/20/10.1063/1.3028027
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/20/10.1063/1.3028027
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Typical TEM image of a SiGeNW. The length is .

Image of FIG. 2.
FIG. 2.

(a) Typical Raman spectrum obtained from a whole region of a single SiGeNW. (b) Expansion of the region of the Si–Si vibration mode of (a). (c) Typical Raman spectra of a SiGeNW measured at the point indicated by bars in the illustration. Distance between the measurement points is . Signals from the region of in diameter are detected in each measurement. (d) Expansion of the region of the Si–Si vibration mode. The dotted curves in F are the results of the fitting by two Lorentzians.

Image of FIG. 3.
FIG. 3.

(a) Intensity ratio of low- to high-wavenumber Si–Si modes as a function of the distance from the catalyst. The dashed line is a guide to the eyes. (b) Raman shift of high- and low-wavenumber Si–Si modes as a function of distance from the catalyst. The dashed curves are guides to the eyes. The horizontal dotted lines represent the wavenumber of the low-wavenumber mode at the catalyst side and that of the high-wavenumber mode at .

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/content/aip/journal/apl/93/20/10.1063/1.3028027
2008-11-17
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Raman characterization of Ge distribution in individual Si1−xGex alloy nanowires
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/20/10.1063/1.3028027
10.1063/1.3028027
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