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Schematic of the IGZO TFTs: (a) conventional TFT with an inverted staggered bottom gate structure and (b) homojunctioned bottom gate structure.
SIMS depth profiles of (a) hydrogen atoms and (b) OH radicals in -IGZO with and without plasma treatment.
Representative transfer characteristics of -IGZO TFTs with (a) Ar and (b) plasma treatments with .
(a) The transistor on-resistance as a function of for Ar and plasma-treated -IGZO TFTs at and . (b) Schematic cross-sectional diagram of the total resistance in homojunctioned -IGZO TFTs with Ar and plasma treatments, respectively.
Comparison of the various device characteristics of -IGZO TFTs with Ar and plasma treatments, respectively.
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