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Comparison of the effects of Ar and plasmas on the performance of homojunctioned amorphous indium gallium zinc oxide thin film transistors
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10.1063/1.3028340
/content/aip/journal/apl/93/20/10.1063/1.3028340
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/20/10.1063/1.3028340

Figures

Image of FIG. 1.
FIG. 1.

Schematic of the IGZO TFTs: (a) conventional TFT with an inverted staggered bottom gate structure and (b) homojunctioned bottom gate structure.

Image of FIG. 2.
FIG. 2.

SIMS depth profiles of (a) hydrogen atoms and (b) OH radicals in -IGZO with and without plasma treatment.

Image of FIG. 3.
FIG. 3.

Representative transfer characteristics of -IGZO TFTs with (a) Ar and (b) plasma treatments with .

Image of FIG. 4.
FIG. 4.

(a) The transistor on-resistance as a function of for Ar and plasma-treated -IGZO TFTs at and . (b) Schematic cross-sectional diagram of the total resistance in homojunctioned -IGZO TFTs with Ar and plasma treatments, respectively.

Tables

Generic image for table
Table I.

Comparison of the various device characteristics of -IGZO TFTs with Ar and plasma treatments, respectively.

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/content/aip/journal/apl/93/20/10.1063/1.3028340
2008-11-18
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Comparison of the effects of Ar and H2 plasmas on the performance of homojunctioned amorphous indium gallium zinc oxide thin film transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/20/10.1063/1.3028340
10.1063/1.3028340
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