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Comparison of the effects of Ar and plasmas on the performance of homojunctioned amorphous indium gallium zinc oxide thin film transistors
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10.1063/1.3028340
/content/aip/journal/apl/93/20/10.1063/1.3028340
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/20/10.1063/1.3028340
/content/aip/journal/apl/93/20/10.1063/1.3028340
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/content/aip/journal/apl/93/20/10.1063/1.3028340
2008-11-18
2014-12-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Comparison of the effects of Ar and H2 plasmas on the performance of homojunctioned amorphous indium gallium zinc oxide thin film transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/20/10.1063/1.3028340
10.1063/1.3028340
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