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Alleviation of Fermi-level pinning effect on metal/germanium interface by insertion of an ultrathin aluminum oxide
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10.1063/1.3028343
/content/aip/journal/apl/93/20/10.1063/1.3028343
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/20/10.1063/1.3028343
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Figures

Image of FIG. 1.
FIG. 1.

Room temperature characteristics of Schottky diodes with different Schottky contact metals on both -type and -type Ge. The inset shows the Richardson plots of the -type Ge, -type Ge, and -type Ge Schottky diodes under the reverse bias, from which the Schottky barrier heights are determined to be 0.54, 0.62, and , respectively.

Image of FIG. 2.
FIG. 2.

(a) Room temperature characteristics of -type and -type (inset) Ge Schottky diodes of various Al oxide layer thicknesses. By insertion of the Al oxide interfacial layer, the characteristics change from rectifying to quasi-Ohmic for -type diodes, while from Ohmic to rectifying for -type ones. (b) The left axis shows the Schottky barrier heights of -type and -type Ge Schottky diodes with various Al thicknesses. The right axis shows the forward and reverse current densities of -type Schottky diodes with various Al thicknesses.

Image of FIG. 3.
FIG. 3.

Schottky barrier heights of the -type Ge Schottky diodes vs the metal work functions, with and without the insertion of an interfacial Al oxide layer. Without the Al oxide layer, the Schottky barrier heights of all three metals are pinned close to the Ge valence band. After insertion of an Al oxide layer, the Schottky barrier heights decrease to 0.39, 0.23, and for Ni, Co, and Fe Schottky diodes, respectively. However, the ideal Schottky–Mott relation (dash line) was never observed.

Image of FIG. 4.
FIG. 4.

Schematics of the band diagram of (a) a strongly pinned Schottky contact and (b) a pinning-alleviated contact by insertion of a thin tunneling oxide.

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/content/aip/journal/apl/93/20/10.1063/1.3028343
2008-11-18
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Alleviation of Fermi-level pinning effect on metal/germanium interface by insertion of an ultrathin aluminum oxide
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/20/10.1063/1.3028343
10.1063/1.3028343
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