1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Write-erase and read paper memory transistor
Rent:
Rent this article for
USD
10.1063/1.3030873
/content/aip/journal/apl/93/20/10.1063/1.3030873
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/20/10.1063/1.3030873
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Schematic of the device’s structure. The magnified inset shows a photo of the real device and the fibers that constitute the dielectric structure. (b) SEM image and EDXS analysis of paper’s surface and a magnification of a paper cross section, revealing the paper multilayer structure.

Image of FIG. 2.
FIG. 2.

Transfer characteristics of the WERM-FET. (a) Double sweep measurements. (b) Transfer characteristic before and after the write-erase stress test.

Image of FIG. 3.
FIG. 3.

Successive single sweep transfer characteristics of the WERM-FET for (a) symmetric and (b) asymmetric ranges. The insets show schematics for input and output signals for each range.

Image of FIG. 4.
FIG. 4.

Log-log plot of the on-state current vs time taken after a single sweep transfer characteristic and after opening the gate electrode terminal, keeping . The inset shows the same data, now using a semilog plot.

Loading

Article metrics loading...

/content/aip/journal/apl/93/20/10.1063/1.3030873
2008-11-17
2014-04-19
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Write-erase and read paper memory transistor
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/20/10.1063/1.3030873
10.1063/1.3030873
SEARCH_EXPAND_ITEM