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(a) Schematic of the device’s structure. The magnified inset shows a photo of the real device and the fibers that constitute the dielectric structure. (b) SEM image and EDXS analysis of paper’s surface and a magnification of a paper cross section, revealing the paper multilayer structure.
Transfer characteristics of the WERM-FET. (a) Double sweep measurements. (b) Transfer characteristic before and after the write-erase stress test.
Successive single sweep transfer characteristics of the WERM-FET for (a) symmetric and (b) asymmetric ranges. The insets show schematics for input and output signals for each range.
Log-log plot of the on-state current vs time taken after a single sweep transfer characteristic and after opening the gate electrode terminal, keeping . The inset shows the same data, now using a semilog plot.
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