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Phonon-assisted ultraviolet anti-Stokes photoluminescence from GaN film grown on Si (111) substrate
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10.1063/1.3030883
/content/aip/journal/apl/93/20/10.1063/1.3030883
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/20/10.1063/1.3030883
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

PL spectrum measured at , photon energy of , and incident power of . Transition energies for , , and are determined to be 3.448, 3.40, 3.358, and , respectively.

Image of FIG. 2.
FIG. 2.

Shift of transition energy as a function of temperature for four PL peaks under the pump power of and at a photon energy of . Solid curves correspond to fitting achieved by using the Varshni relation.

Image of FIG. 3.
FIG. 3.

PL intensity integrated over bound-exciton transition peak vs average pump power. The inset illustrates ASPL when the sample was excited at with an average power of .

Image of FIG. 4.
FIG. 4.

Temperature dependence of PL spectra for a pump photon energy of and a pump power of . Inset: Arrhenius fit to integrated PL intensity vs reciprocal of temperature.

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/content/aip/journal/apl/93/20/10.1063/1.3030883
2008-11-20
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Phonon-assisted ultraviolet anti-Stokes photoluminescence from GaN film grown on Si (111) substrate
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/20/10.1063/1.3030883
10.1063/1.3030883
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