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Panel (a): SEM image of the device structure. Panel (b): 3D schematic of the ring with two DWs in the top-left and bottom-right corners and with a magnetized nanoparticle of moment producing a stray field in the top-left corner. Panel (c): DW displacement field calculated without (solid line) and with (dashed line) a magnetic particle of 130 nm placed at a distance of 15 nm over the corner with a DW. The magnetic field is applied as shown in panel (b). In the calculations we used a computational cell of and the standard material parameters for Py.
AFM images from rings capped with 30 nm of after beads have been dispensed in solution on the chip surface: (a) cluster of 50 nm beads and (b) single 130 nm bead. The diagonal lines indicate the position of the DW. Panel (c): MFM image from a ring after initialization with DWs at the top-left and bottom-right corners. Panel (d): simulation of the focusing magnetic forces on a plane at 200 nm distance from the ring surface. The dashed lines in panels (c) and (d) are guide for the eyes.
AFM images from a (a) ring clean and (b) after beads dispensation. In panel (b) the white line indicates the position of the DW, while circles put in evidence four beads positioned in the proximity of the corner; the arrow indicates the bead substantially affecting the DW displacement field according to micromagnetic simulations. Panel (c): voltage drop across the corner as a function of the magnetic field for the same ring clean (squares) and with beads on top (circles). Labels A and B mark the beginning and the end of the acquisition, respectively.
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