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Origin of unusual rapid oxidation process for ultrathin oxidation of silicon
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10.1063/1.3030985
/content/aip/journal/apl/93/20/10.1063/1.3030985
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/20/10.1063/1.3030985

Figures

Image of FIG. 1.
FIG. 1.

The schematic of the oxidation process for (a) the initial rapid oxidation regime with and (b) the later slow oxidation state with .

Image of FIG. 2.
FIG. 2.

The experimental data (see Ref. 13) of oxide thickness as a function of time compared to our theoretical model curves under the pressure of 1 Torr and at the oxidation temperature of 450, 400, and . The inset gives the comparison at the oxidation temperature of and under the pressure of 1, 0.1, and 0.01 Torr.

Image of FIG. 3.
FIG. 3.

Arrhenius plots for the two different regimes. The black circle and red square correspond to the initial rapid oxidation regime and the slow oxidation state, respectively, the line is only used as guide for the eyes.

Tables

Generic image for table
Table I.

The fitting parameters of our model for the different regimes under the pressure of 1 Torr and at the temperature of 300, 400, .

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/content/aip/journal/apl/93/20/10.1063/1.3030985
2008-11-20
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Origin of unusual rapid oxidation process for ultrathin oxidation (<2 nm) of silicon
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/20/10.1063/1.3030985
10.1063/1.3030985
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