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Temperature dependence of the low frequency noise in indium arsenide nanowire transistors
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View: Figures


Image of FIG. 1.
FIG. 1.

Typical characteristics of InAs NW FET at , , 0, 2, and 6 V measured at . Inset (a) shows a SEM image of the device. The characteristic of the same device at is shown in inset (b) for and 2 K.

Image of FIG. 2.
FIG. 2.

The logarithm of the normalized current noise spectra vs at , , , , , and for . The drain bias and . The solid lines are linear fits to the data and the dashed line represents the dependence. The inset shows the inverse of the noise amplitude deduced form the linear fits vs . The solid line in the inset is a linear fit used to determine Hooge’s parameter .

Image of FIG. 3.
FIG. 3.

vs at for different in the frequency range 70 Hz–3.2 kHz. The frequency exponent obtained form the linear fits (solid lines) is plotted vs in the inset. As approaches the threshold value , increases in magnitude signaling a gradual change from noise to Lorentzian noise at .

Image of FIG. 4.
FIG. 4.

The Hooge’s parameter vs for two InAs NW FETs, shown in semilog scale. exhibits thermally activated behavior. The distribution of activation energies of the fluctuators can be inferred from as (see text), as shown in the inset.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Temperature dependence of the low frequency noise in indium arsenide nanowire transistors