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Interface control and leakage current conduction mechanism in film prepared by pulsed laser deposition
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10.1063/1.3033526
/content/aip/journal/apl/93/20/10.1063/1.3033526
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/20/10.1063/1.3033526
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Cross-sectional HRTEM images of as-deposited and annealed films. The inset graph in (b) presents the FFT pattern of annealed film.

Image of FIG. 2.
FIG. 2.

The curves of as-deposited and annealed films.

Image of FIG. 3.
FIG. 3.

Conduction mechanism fitting of annealed films under gate injection. (a) The curve of vs for annealed film in low field . The inset shows a schematic energy band diagram to explain the Schottky emission. (b) The curve of vs for annealed film in high field . The inset shows a schematic energy band diagram to explain trap-assisted tunneling.

Image of FIG. 4.
FIG. 4.

Conduction mechanism fitting of annealed films under substrate injection. (a) The curve of vs for annealed film in low field . The inset shows a schematic energy band diagram to explain the Schottky emission. (b) The curve of vs for annealed film in high field . The inset shows curve of vs for as-deposited film in high field .

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/content/aip/journal/apl/93/20/10.1063/1.3033526
2008-11-20
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Interface control and leakage current conduction mechanism in HfO2 film prepared by pulsed laser deposition
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/20/10.1063/1.3033526
10.1063/1.3033526
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