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Polarity driven formation of InAs/GaAs hierarchical nanowire heterostructures
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10.1063/1.3033551
/content/aip/journal/apl/93/20/10.1063/1.3033551
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/20/10.1063/1.3033551
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Figures

Image of FIG. 1.
FIG. 1.

[(a) and (b)] Schematics of asymmetrically formed InAs/GaAs radial nanowire heterostructure and its cross section, respectively. (c) SEM image showing InAs/GaAs nanowire heterostructures.

Image of FIG. 2.
FIG. 2.

(a) Low magnification TEM image showing a section of a typical InAs/GaAs nanowire heterostructure. [(b) and (c)] TEM images of InAs/GaAs nanowire taken along the and zone axes, respectively. (d) TEM image of cross section of an InAs/GaAs nanowire heterostructure and (e) the corresponding diffraction pattern. (f) zone axis electron diffraction pattern taken from a section in (b). (f) High resolution TEM image of InAs/GaAs interface region with misfit dislocations arrowed.

Image of FIG. 3.
FIG. 3.

(a) TEM image of the cross section of InAs/GaAs nanowire with 3 min InAs deposition. (b) The corresponding electron diffraction pattern.

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/content/aip/journal/apl/93/20/10.1063/1.3033551
2008-11-20
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Polarity driven formation of InAs/GaAs hierarchical nanowire heterostructures
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/20/10.1063/1.3033551
10.1063/1.3033551
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