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Current collapse in AlGaN/GaN transistors studied using time-resolved Raman thermography
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) Extent of current collapse as a function of gate pulse width for two AlGaN/GaN HEMTs: source-drain current at end of electrical pulse, pulsing the gate from pinch off to on state , divided by corresponding dc source-drain current. The duty cycle was 10%. (b) dc and pulsed curves for AlGaN/GaN HEMT from (a) with large current collapse (device A). dc measurements were taken at ; pulsed measurements were taken as in (a).

Image of FIG. 2.
FIG. 2.

Temperature of AlGaN/GaN HEMTs between source and drain contact during dc and pulsed operation of (a) device A and (b) device B, pulsing the gate from a pinch-off state to the on state , at and , respectively, to obtain similar channel temperatures. The temperature corresponds to the temperature at the end of the electrical pulse. Solid lines represent a Lorentzian fit to the data points.

Image of FIG. 3.
FIG. 3.

Source-drain current vs bias of AlGaN/GaN HEMT, determined using drift diffusion simulation at zero gate bias, (a) with increasing virtual gate length from 0 to in steps at a fixed trap charge density on the surface on the drain side of the gate, and (b) with increasing from 0 to at fixed . Inset in (b) shows extent of current collapse, at source-drain bias of 20 V, as a function of .


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Current collapse in AlGaN/GaN transistors studied using time-resolved Raman thermography