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A percolative capacitor structure composed of BMN films deposited in a pure Ar ambient atmosphere without oxygen.
(a) TEM image of BMN(Ar) and BMN(O) layers in multilayer BMN films deposited at room temperature. (b) The focused area indicated by a cubic box in (a) is enlarged, and approximately 10-nm-sized particles were observed in the amorphous BMN phase. The inset of (b) shows an enlargement of the crystalline particles. (c) A SADP of the crystalline particles where denotes the lattice distance calculated from the diffraction spots. (d) XPS doublets observed in BMN(Ar) and BMN(O) layers by XPS depth profiles.
(a) Variations in dielectric constant and dissipation factor measured at 100 kHz in BMN multilayer films with various BMN(O) thicknesses deposited at room temperature and sputtering power of 50 W. (b) The relationship between leakage current density and an applied voltage in 260-nm-thick BMN films deposited in (A) and (B) pure Ar ambient atmosphere, BMN multilayer films with (C) 5-nm-thick, (D) 10-nm-thick, (E) 20-nm-thick, (F) 30-nm-thick, and (G) 40-nm-thick BMN(O) layers.
(a) Variations in dielectric constant and dissipation factor measured at 100 kHz in 260-nm-thick BMN(Ar) films deposited with various rf powers. The close and open triangles indicated with black color in (a) exhibit a dielectric constant and a dissipation factor, respectively, of BMN multilayer films with 5-nm-thick BMN(O) layers deposited at 70 W. (b) The relationship between leakage current density and an applied voltage in 260-nm-thick BMN(Ar) films deposited at (A) 55, (B) 60, (C) 65, (D) 70, and (E) in multilayer films with 5-nm-thick BMN(O) layers deposited at 70 W.
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