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Evaluation of capacitance-voltage characteristic and memory window of metal-ferroelectric-insulator-silicon capacitors
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10.1063/1.3021015
/content/aip/journal/apl/93/21/10.1063/1.3021015
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/21/10.1063/1.3021015
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Schematic of MFIS capacitor and the (b) corresponding equivalent circuit.

Image of FIG. 2.
FIG. 2.

(a) loops of SBT thin film and (b) loops of BLT thin film.

Image of FIG. 3.
FIG. 3.

(a) characteristic of MFIS capacitors with SBT ferroelectric layer (210 nm) and insulator layer with thicknesses 28 and 42 nm and (b) BLT ferroelectric layer (200 nm) and MgO insulator layer with thicknesses 5 and 10 nm.

Image of FIG. 4.
FIG. 4.

(a) Memory windows of MFIS capacitors with SBT ferroelectric layer (210 nm) and insulator layer with thicknesses 28 and 42 nm and (b) BLT ferroelectric layer (200 nm) as the ferroelectric layer and MgO insulator layer with thicknesses 5 and 10 nm.

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/content/aip/journal/apl/93/21/10.1063/1.3021015
2008-11-24
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Evaluation of capacitance-voltage characteristic and memory window of metal-ferroelectric-insulator-silicon capacitors
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/21/10.1063/1.3021015
10.1063/1.3021015
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