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Photoluminescence of confined electron-hole plasma in core-shell silicon/silicon oxide nanowires
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10.1063/1.3021359
/content/aip/journal/apl/93/21/10.1063/1.3021359
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/21/10.1063/1.3021359
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Figures

Image of FIG. 1.
FIG. 1.

(a) SEM images of low pressure chemical vapor deposition copper catalyzed SiNWs. We can estimate the NWs length to . The inset is a SEM image of a passivated NW. (b) SEM image of the etched NWs.

Image of FIG. 2.
FIG. 2.

PL spectrum obtained with a 4 kHz rate Nd:YAG focalized on a spot of 0.3 mm in diameter at cryostat temperature of 10 K. (a) Left: comparison of normalized spectral response of as-grown NWs, passivated NWs, and bulk silicon. Right: absolute spectrum of as-grown and oxidized SiNWs. (b) [and (c)] Pump power (and temperature) dependence of passivated NWs.

Image of FIG. 3.
FIG. 3.

Comparison of the PL of E-SiNWs [with a cross section of (red curve)] and time resolved PL of CVD-SiNWs (black curve) at 10 K. The spectrum is taken 100 ns after the pulse and the temporal windows are of 10 ns. The blue curve is the computation of the emission spectrum of an ehp with a density of and a temperature of 46 K.

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/content/aip/journal/apl/93/21/10.1063/1.3021359
2008-11-24
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Photoluminescence of confined electron-hole plasma in core-shell silicon/silicon oxide nanowires
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/21/10.1063/1.3021359
10.1063/1.3021359
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