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(a) The cross-sectional view of split-gate memory. (b) The band diagram under the same program condition of the -doped and -doped FG split-gate cells.
Comparison of the programming characteristics for split-gate cells with FG at different types of doping and concentrations. The read condition is .
The cumulative distribution of 2 Mbit cells at programmed state. The programming conditions are for -type and -type cells.
The normalized on-current for endurance characteristics of the split-gate cells with -type and -type FG dopings.
Program conditions of split-gate memory cells. The current criterion for successful program is around .
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