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High program efficiency of -type floating gate in -channel split-gate embedded flash memory
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10.1063/1.3023057
/content/aip/journal/apl/93/21/10.1063/1.3023057
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/21/10.1063/1.3023057

Figures

Image of FIG. 1.
FIG. 1.

(a) The cross-sectional view of split-gate memory. (b) The band diagram under the same program condition of the -doped and -doped FG split-gate cells.

Image of FIG. 2.
FIG. 2.

Comparison of the programming characteristics for split-gate cells with FG at different types of doping and concentrations. The read condition is .

Image of FIG. 3.
FIG. 3.

The cumulative distribution of 2 Mbit cells at programmed state. The programming conditions are for -type and -type cells.

Image of FIG. 4.
FIG. 4.

The normalized on-current for endurance characteristics of the split-gate cells with -type and -type FG dopings.

Tables

Generic image for table
Table I.

Program conditions of split-gate memory cells. The current criterion for successful program is around .

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/content/aip/journal/apl/93/21/10.1063/1.3023057
2008-11-24
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High program efficiency of p-type floating gate in n-channel split-gate embedded flash memory
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/21/10.1063/1.3023057
10.1063/1.3023057
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