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The investigation of capture/emission mechanism in high- gate dielectric soft breakdown by gate current random telegraph noise approach
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10.1063/1.3036681
/content/aip/journal/apl/93/21/10.1063/1.3036681
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/21/10.1063/1.3036681
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The band diagram in high- dielectrics (a) with empty trap state where electrons can be captured; (b) with filled trap state and the gate current is reduced. (c) The schematic of SBD paths in the gate dielectric.

Image of FIG. 2.
FIG. 2.

RTN measurement for the device (a) before SRD and (b) after SBD. Capture and emission times are defined in the plot. Note that the gate leakage shows a third-order difference in magnitude.

Image of FIG. 3.
FIG. 3.

Calculated capture and emission times as a function gate bias for the devices before and after SBD. Note that emission time, in (b), is field dependent after the SBD.

Image of FIG. 4.
FIG. 4.

The dependence of capture time with temperature: (a) pre-SBD; (b) post-SBD. The activation energy shows a huge change for devices after the SBD.

Image of FIG. 5.
FIG. 5.

Arrhenius plot for pre- and post-SBD. It shows no changes of with gate bias, at a specific temperature in pre-SBD case. However, it shows gate bias dependent for post-SBD case. This is attributed to a decrease in the cross section as a result of the formation of a SBD induced conductive path.

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/content/aip/journal/apl/93/21/10.1063/1.3036681
2008-11-24
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: The investigation of capture/emission mechanism in high-k gate dielectric soft breakdown by gate current random telegraph noise approach
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/21/10.1063/1.3036681
10.1063/1.3036681
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