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Carrier concentration dependence of terahertz transmission on conducting ZnO films
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10.1063/1.3036708
/content/aip/journal/apl/93/21/10.1063/1.3036708
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/21/10.1063/1.3036708

Figures

Image of FIG. 1.
FIG. 1.

(a) The measured transmitted terahertz pulse through air (solid line) and glass substrate (dashed line); (b) the electric field of terahertz pulse transmitted through conducting ZnO film on glass substrate with carrier concentrations of (sample 1), (sample 2), and (sample 3). The curves are shifted vertically for clarity, and the dashed square on the right hand highlights the internal reflected pulse at the interface.

Image of FIG. 2.
FIG. 2.

(a) Measured conductivity and (b) refractive index of the ZnO film with various carrier concentrations as a function of frequency (square, sample 1; filled dot, sample 2; and triangle, sample 3). The solid curves are theoretical fittings with the Drude model [Eqs. (2) and (3)]. The corresponding parameters during fitting are chosen from Table I.

Tables

Generic image for table
Table I.

Physical parameters of carrier concentration , film thickness , carrier mobility , plasma frequency , and damping rate of the three conducting ZnO films. The error bars in columns of and are calculated according to the data of and , respectively.

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/content/aip/journal/apl/93/21/10.1063/1.3036708
2008-11-24
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Carrier concentration dependence of terahertz transmission on conducting ZnO films
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/21/10.1063/1.3036708
10.1063/1.3036708
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