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Characteristics of BZN dielectric layer. (a) XRD pattern of the BZN film and AFM image of the as-deposited BZN film (inset). (b) Permittivity as a function of frequency for the amorphous BZN film, measured without dc bias field. Inset is the paralleled structure for capacitance measurement.
Scheme of the fabrication processing for top-gated ZnO NW FET with BZN dielectric. (a) Ion beam was focused at both ends of the individual ZnO NW to mill away the BZN layers and uncover the clean ZnO NW surface. (b) Pt is deposited onto both ends of the exposed ZnO NW and across the middle of the ZnO NW, thus forming the source, drain, and gate electrodes. (c) SEM image of the fabricated top-gated ZnO NWT with BZN dielectric.
Electric transport measurements. (a) transfer characteristics of the ZnO NW FET with BZN top gate. (b) Curves of current vs source-drain bias under various gate voltages.
Comparison between the transistor characteristics of the prototype ZnO NW FET with BZN dielectric and those of previously reported high-performance NW FETs or OTFTs.
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