No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Solution-processed carbon electrodes for organic field-effect transistors
1.Organic Field-Effect Transistors, edited by Z. Bao and J. Locklin (CRC, New York, 2007).
4.M. J. Panzer and C. D. Frisbie, in Organic Field-Effect Transistors (Ref. 1), p. 139.
9.T. Mori, K. Shibata, H. Wada, and J. Inoue, Mater. Res. Soc. Symp. Proc. (to be published).
10.M. Hiraoka, T. Hasegawa, Y. Abe, T. Yamada, Y. Tokura, H. Yamochi, G. Saito, T. Akutagawa, and T. Nakamura, Appl. Phys. Lett. 89, 173504 (2006).
14.T. Minari, M. Kano, T. Miyadera, S.-D. Wang, Y. Aoyagi, M. Seto, T. Memoto, S. Isoda, and K. Tsukagoshi, Appl. Phys. Lett. 92, 173301 (2008).
Article metrics loading...
Bottom-contact organic transistors with carbon-paste electrodes are fabricated by means of the surface selective deposition technique, where a carbon-paste solution is deposited on the region in which the self-assembled monolayers are removed by ultraviolet light irradiation. The resulting bottom-contact pentacene transistor realizes high performance of . The present method is applied to solution-processed polythiophene transistors as well as -channel materials.
Full text loading...
Most read this month