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[(a) and (b)] Schematic illustration of the fabrication process. (c) SEM image of a sample with reference AMs and randomly dispersed nanowires. This image has been used to pattern the electrodes of the final device shown in (d), see dashed box in (c). For more information, see text.
(a) Illustration of the modified piezoresponse force microscopy measurement setup, and [(b) and (c)] contact-mode AFM topographic image of the fabricated nanowire structure.
PFM measurements and finite element simulation results. (a) Amplitude and (b) phase images of the piezoelectric response of the nanowire under lateral electrical fields. (c) An illustration of possible domain patterns of the studied KN nanowire. (d) Simulated electrostatic potential profile in a cross-sectional plane along the nanowire. (e) AFM tip deflection at selected points [crosses in (a)]. (f) Integrated electric field components as a function of the AFM tip position.
Linear dependence of the deflection amplitude as a function of the applied ac voltage measured at a fixed point on the nanowire.
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