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Cross-sectional SEMs of DBRs formed by irradiating wide lines, 2 mm in length with fluences of [(a)–(c)] and [(d)–(f)] . In (a) and (d), 20 pairs of high/low porosity layers were anodized to a first stage DBR. In (b) and (e), the first stage DBR layers were removed and the same anodization process repeated to give a second stage. In (c) and (f), the same process was repeated to give a third stage DBR.
(a) Measured from Fig. 1 vs anodization depth of the unirradiated background for fluences of , , and . Inset shows the initial gradient of vs fluence. (b) Schematic of white light illumination inclined at (i) steep and (ii) shallow angles interacting with a deeply anodized DBR boundary with all layers present.
(a) Scanning electron microscope image of deeply anodized (third stage) rectangular DBR pixels. Optical reflection images of this structure under (b) normal and (c) additional inclined illumination from two directions at . (d) Third stage circular pixels under normal and inclined illumination from one direction at . (e) Optical reflection images of shallow anodized (second stage) rectangular DBR pixels under inclined illumination at . (f) Line scan of the recorded red, green, and blue intensities (peaks from left to right) across the region indicated in (e).
Optical images showing light reflected at normal when illuminated with white light at (a) normal incidence , inclined illumination at (b) and (c) to the wafer surface in the horizontal plane. (f) Optical reflectivity spectra recorded from the central portion of the dragon, for different illumination angles.
Photographs of reflected light from a patterned alphanumeric display, for progressively shallower white light illumination from (a) to (c). Three different types of patterning and fluences were used in regions (i) to (iii) to create differing reflective behaviors. The cross section of the resultant DBRs produced in each case is shown in (c).
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