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Effect of C incorporation on relaxation of SiGe/Si
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10.1063/1.3040308
/content/aip/journal/apl/93/22/10.1063/1.3040308
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/22/10.1063/1.3040308
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic diagram of a heterostructure with a SiGeC intermediate layer.

Image of FIG. 2.
FIG. 2.

AFM images of the annealed heterostructures with a SiGeC intermediate layer grown at (a) and (b) and (c) without a SiGeC intermediate layer . (d) line profile of AFM images [white arrows in (a) and (b)].

Image of FIG. 3.
FIG. 3.

Bright field XTEM image of the annealed heterostructures with a SiGeC intermediate layer grown at . White and black arrows represent the misfit dislocations and the pileup of dislocation loops, respectively.

Image of FIG. 4.
FIG. 4.

High-resolution reciprocal lattice mapping of (a) as-deposited and (b) annealed heterostructures with a SiGeC intermediate layer grown at .

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/content/aip/journal/apl/93/22/10.1063/1.3040308
2008-12-01
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of C incorporation on relaxation of SiGe/Si
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/22/10.1063/1.3040308
10.1063/1.3040308
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