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Surface strain and its impact on the electrical resistivity of GaN channel in AlGaN/GaN high electron mobility transistor
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10.1063/1.3040315
/content/aip/journal/apl/93/22/10.1063/1.3040315
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/22/10.1063/1.3040315
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

High resolution x-ray rocking curve (top) and high resolution x-ray diffraction spectra (bottom) of GaN from AlGaN/GaN HEMT wafer.

Image of FIG. 2.
FIG. 2.

Spatial distribution of the in-plane strain in GaN as measured by x-ray diffraction on AlGaN/GaN HEMT wafer.

Image of FIG. 3.
FIG. 3.

Spatial distribution of the electrical resistivity on the AlGaN/GaN HEMT wafer.

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/content/aip/journal/apl/93/22/10.1063/1.3040315
2008-12-03
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Surface strain and its impact on the electrical resistivity of GaN channel in AlGaN/GaN high electron mobility transistor
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/22/10.1063/1.3040315
10.1063/1.3040315
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