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Field-effect transistor fabricated with nickel(II) etioporphyrin-I micrometer-sized crystals
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See EPAPS Document No. E-APPLAB-93-018849
for output characteristics of blank channel of top contact device. For more information on EPAPS, see http://www.aip.org/pubservs/epaps.html.[Supplementary Material]
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We fabricated a field-effect transistor using micrometer-sized crystals of nickel(II) etioporphyrin-I as active material. Microwires and micrometer-sized crystals of were obtained by heating thin film under high vacuum. Through this method, traps due to solvent molecules could be avoided. The transistor fabricated with these micrometer-sized crystals has a hole mobility of , which is two orders of magnitude higher than that obtained with the thin film structure .
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