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Field-effect transistor fabricated with nickel(II) etioporphyrin-I micrometer-sized crystals
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/content/aip/journal/apl/93/22/10.1063/1.3040319
2008-12-04
2014-11-24

Abstract

We fabricated a field-effect transistor using micrometer-sized crystals of nickel(II) etioporphyrin-I as active material. Microwires and micrometer-sized crystals of were obtained by heating thin film under high vacuum. Through this method, traps due to solvent molecules could be avoided. The transistor fabricated with these micrometer-sized crystals has a hole mobility of , which is two orders of magnitude higher than that obtained with the thin film structure .

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Scitation: Field-effect transistor fabricated with nickel(II) etioporphyrin-I micrometer-sized crystals
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/22/10.1063/1.3040319
10.1063/1.3040319
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