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Transparent resistive random access memory and its characteristics for nonvolatile resistive switching
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10.1063/1.3041643
/content/aip/journal/apl/93/22/10.1063/1.3041643
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/22/10.1063/1.3041643
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) The fabricated TRRAM device and (b) its transmittance in the visible region. The inset shows a schematic diagram of the structure.

Image of FIG. 2.
FIG. 2.

An XRD spectrum of a ZnO thin film deposited on glass.

Image of FIG. 3.
FIG. 3.

Typical characteristics of a TRRAM device. The inset shows the initial electroforming.

Image of FIG. 4.
FIG. 4.

(a) Retention and (b) switching cycling characteristics for the HRS and LRS at room temperature as measured at .

Image of FIG. 5.
FIG. 5.

(a) The log-log plot of in the LRS and (b) in the HRS. The inset shows the Poole–Frenkel emission at the high voltage region in the HRS.

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/content/aip/journal/apl/93/22/10.1063/1.3041643
2008-12-03
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Transparent resistive random access memory and its characteristics for nonvolatile resistive switching
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/22/10.1063/1.3041643
10.1063/1.3041643
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