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(a) TEM image of PS--P4VP nanodomains with AuNPs. (b) Schematic illustration of self-assembled PS--(P4VP/AuNPs) micellar film on substrate. Dependence of characteristics on cumulative charging time , for voltage sweeping range of , under (c) , , 1 ms, 10 ms, 100 ms, 500 ms, and 1 s, and (d) , , 1, 2, 3, 5, 8, and 10 s. curve shifts from right to left with increasing for (c) while curve shifts from left to right with increasing for (d). as a function of charging time for (e) positive and (f) negative pulse voltages. The inset shows a schematic illustration of the MIS structure: Au gate electrode/PS--(P4VP/AuNPs)/5 nm -type silicon substrate. The molar ratio of /P4VP is 1:4. All measurements are done at 100 kHz, with an ac amplitude of 15 mV superimposed on the dc bias.
characteristics of PS--(P4VP/AuNPs) memory and control PS--P4VP capacitor for (a) ; inset shows the Schottky emission plot of vs for 300–343 K for memory capacitor and the curve fitting is performed in the field of 0.2–0.4 MV/cm, (b) ; inset shows weak temperature dependence in the characteristics for range. The corresponding band diagrams under applied bias are also illustrated. Electrons and holes are represented by solid and open circles respectively.
for both Au and Al gated devices for (a) negative pulse voltages, and (b) positive pulse voltages, . Insets show the characteristics in negative and positive voltage ranges respectively.
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