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Terahertz emission from silicon and magnesium doped indium nitride
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10.1063/1.3043450
/content/aip/journal/apl/93/22/10.1063/1.3043450
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/22/10.1063/1.3043450
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Figures

Image of FIG. 1.
FIG. 1.

Schematic cross section of an InN:Mg thin film. The -axis measures the distance from the air/InN interface into the thin film. InN:Mg consists of an -type inversion layer at the surface followed by a charge depletion region and the bulk -type region. The thickness of the -type inversion layer and the depletion region are estimates according to Refs. 10, 12, and 13. The dotted line represents the calculated absorption of 800 nm wavelength laser radiation in InN (with , absorbed, and incident laser radiation, respectively). The light absorption coefficient of InN at 800 nm is [penetration depth ]. Absorption of laser radiation and photocarrier generation in InN:Mg occurs across the -type inversion layer, depletion region and bulk -type region. The majority of laser photons are absorbed in the bulk -type region.

Image of FIG. 2.
FIG. 2.

Measured terahertz emission from as grown -type InN, InN:Si, and InN:Mg as a function of dc Hall mobility of the InN thin films. The data points plotted represent the peak terahertz emission signal measured in the time domain (Ref. 2). Open squares are data points representing terahertz emission from InN:Mg. The label to the right of the data point is the sample number. -type conductivity of GS1810 was measured by the authors of Refs. 10 and 13. Samples GS1906, GS1909, and GS1920 are expected to exhibit similar doping.

Image of FIG. 3.
FIG. 3.

Terahertz emission measured as a function of electron concentrations in as grown -type InN and InN:Si. The data points plotted represent the peak terahertz emission signal measured in the time domain (Ref. 2).

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/content/aip/journal/apl/93/22/10.1063/1.3043450
2008-12-05
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Terahertz emission from silicon and magnesium doped indium nitride
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/22/10.1063/1.3043450
10.1063/1.3043450
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