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Growth behaviors of ultrathin ZnSe nanowires by Au-catalyzed molecular-beam epitaxy
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View: Figures


Image of FIG. 1.
FIG. 1.

[(a) and (b)] ZnSe nanowires with small diameters show fast growth rates. (c) High-density stacking faults and twins (marked by the arrows) frequently occur in ZnSe nanowires grown at a low temperature. [(d) and (e)] Ultrathin ZnSe nanowires always form hcp structure.

Image of FIG. 2.
FIG. 2.

(a) The solid dots indicate the growth rates measured from different diameters of ZnSe nanowires. The dashed line is the fitting curve by and the solid line by . (b) Experimental data of the whisker growth rates reported by Givargizov (see Ref. 2).

Image of FIG. 3.
FIG. 3.

Different diffusion models for the source atoms to incorporate into the growth front of the nanowire. (a) The classical VLS. (b) The metal droplet is in partially molten state. Its surface and interface are liquid, while the core of the droplet may be solid. (c) The metal catalyst is solid, but the interface is liquid.

Image of FIG. 4.
FIG. 4.

(a) The schematic concentration profile of the source atoms at the catalytic interface. (b) The flux of the source atoms flowing into the catalytic interface.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Growth behaviors of ultrathin ZnSe nanowires by Au-catalyzed molecular-beam epitaxy