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The effect of aluminum oxide incorporation on the material and electrical properties of hafnium oxide on Ge
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10.1063/1.3040311
/content/aip/journal/apl/93/23/10.1063/1.3040311
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/23/10.1063/1.3040311
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) The cation atomic percentage of aluminum incorporated into the films as a function of the fraction of aluminum oxide cycles. The inset shows the corresponding rms roughness and rms roughness/thickness. (b) Cross sectional HRTEM images for (left) a film deposited on un-nitrided Ge and (right) a film on nitrided Ge.

Image of FIG. 2.
FIG. 2.

(a) The XANES and (b) Fourier transformed EXAFS spectra of , , and films.

Image of FIG. 3.
FIG. 3.

characteristics at 1 MHz, 100 kHz, 10 kHz, and 1 kHz for (a) 12 nm , (b) 15 nm , and (c) 15 nm and (d) their characteristics. (e) characteristics at 1 MHz for a 5 nm film and a 4 nm film.

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/content/aip/journal/apl/93/23/10.1063/1.3040311
2008-12-09
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: The effect of aluminum oxide incorporation on the material and electrical properties of hafnium oxide on Ge
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/23/10.1063/1.3040311
10.1063/1.3040311
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