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Experimental (solid curves), two-oscillator model fitted (◻), and direct fitted (○) ellipsometric data for as-deposited NP film (a) and film sintered for 18 min (b). Normal incident transmission of as-deposited NP film (c) and film sintered for 18 min (d). The inset shows the measurement configuration.
(a) The evolutions of oscillator energy (i), the thickness (ii), dc conductance (iii), and grain size (vi) as a function of time. (b) Spectra of dielectric functions and for NP films: (◻) as deposited, (△) sintered for 4 min, (○) sintered for 15 min, and sintered for 18 min. (c) The AFM images of NP films.
In situ ellipsometric (evolution of oscillator energies A and B vs time) and dc measurement (evolution of conductance for electrode gap of 6 and vs time) results. Note that the indicated time includes the cool-down to room temperature for the ellipsometric measurement.
Calculated for various filling percentage. (a) From 0.7 to 2.0 eV and (b) from 2.0 to 3.0 eV. The inset shows the network configuration and the representation of NP film structure and sintering process for ac and dc calculations. The black bars and gray bars represent metal bonds and dielectric bonds, respectively.
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