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Interface roughness in short-period superlattices
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10.1063/1.3050531
/content/aip/journal/apl/93/24/10.1063/1.3050531
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/24/10.1063/1.3050531
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Dependence of the electron mobility (a) and the parameter (b) on the width of the InGaAs wells measured in the SLs (closed circles) and in the SLs (open circles). Diamonds, triangles, squares, and stars in panel (a) are the data from Refs. 4, 3, 6, and 8 , respectively. The solid line is the power law dependence describing the data obtained in homogeneously doped SLs. The hatched area indicates the region of the power law dependences describing the data obtained in heterostructures. The inset shows the electron mobilities measured in the differently doped SLs.

Image of FIG. 2.
FIG. 2.

Resistances measured as functions of the temperature in (a) and (b) SLs.

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/content/aip/journal/apl/93/24/10.1063/1.3050531
2008-12-16
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Interface roughness in short-period InGaAs∕InP superlattices
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/24/10.1063/1.3050531
10.1063/1.3050531
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