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(a) Cross sectional TEM bright-field micrograph of SRN/amorphous-Si superlattice structure consisting of ten SRN layers and nine layers for a total thickness of . (b) Higher magnification of a SRN layer, showing amorphous Si nanocrystals marked by arrows.
(a) The inset shows how the pump and the probe interact with the sample. (b) Experimental setup: Pump-Raman laser; IRC–infrared collimator; –bandpass filter at ; Probe–external cavity diode laser; –microscope objective lens ; DF–dichroic filter; –longpass filter at ; Ch–chopper; PD–optically broadband photodetector; LIA–lock-in amplifier. Black lines represent electrical connections and wiring, green lines represent free-space optical beams, and magenta lines represent optical fiber.
Measured spectral characteristics of in amorphous Si nanoclusters embedded in SRN-Si-SLs superlattice structures.
The SRS-gain (amplification of the stokes signal in dB/cm) is plotted against the effective pump power at the sample surface both for amorphous Si nanoclusters embedded in SRN-Si-SLs (◻ red) and for bulk silicon (○ black).
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