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Nanoscale doping fluctuation resolved by electrostatic force microscopy via the effect of surface band bending
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10.1063/1.3050521
/content/aip/journal/apl/93/25/10.1063/1.3050521
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/25/10.1063/1.3050521
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) TEM image of the CNT-modified cantilever employed in this work. (b) SEM image of our sample showing a CMOS structure.

Image of FIG. 2.
FIG. 2.

(a) AFM topographic image of the sample after HF treatment. (b) EFM phase and (c) amplitude images display the dopant distribution in the undergate area.

Image of FIG. 3.
FIG. 3.

EFM amplitude images (a) taken from 5 to 8 V, (b) taken with the zoom-in bias range of 6.0–6.5 V, and (c) taken in the negative bias range up to . (d) Plot of the apparent amplitude change as a function of the bias voltage.

Image of FIG. 4.
FIG. 4.

(a) EFM amplitude image taken near the critical bias, showing clear contrast of dopant concentration along the gate edges. (b) and (c) The line scans taken from the cross white line and the dashed line as indicated in (a), demonstrating a superior contrast.

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/content/aip/journal/apl/93/25/10.1063/1.3050521
2008-12-22
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Nanoscale doping fluctuation resolved by electrostatic force microscopy via the effect of surface band bending
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/25/10.1063/1.3050521
10.1063/1.3050521
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