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(a) TEM image of the CNT-modified cantilever employed in this work. (b) SEM image of our sample showing a CMOS structure.
(a) AFM topographic image of the sample after HF treatment. (b) EFM phase and (c) amplitude images display the dopant distribution in the undergate area.
EFM amplitude images (a) taken from 5 to 8 V, (b) taken with the zoom-in bias range of 6.0–6.5 V, and (c) taken in the negative bias range up to . (d) Plot of the apparent amplitude change as a function of the bias voltage.
(a) EFM amplitude image taken near the critical bias, showing clear contrast of dopant concentration along the gate edges. (b) and (c) The line scans taken from the cross white line and the dashed line as indicated in (a), demonstrating a superior contrast.
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