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A solid-liquid-vapor mechanism for anisotropic silicon etching
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10.1063/1.3055606
/content/aip/journal/apl/93/26/10.1063/1.3055606
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/26/10.1063/1.3055606
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Gold silicon phase diagram showing the bulk eutectic composition. Note that the eutectic temperature is size dependent, exhibiting lower values at reduced dimensions.

Image of FIG. 2.
FIG. 2.

Proposed mechanism for SLV (Solid-Liquid-Vapor) etching of silicon.

Image of FIG. 3.
FIG. 3.

(a) AFM micrograph of annealed gold lines on H terminated Si(111) surface indicating eutectic formation. (b) AFM micrograph of SLV etched surface after halogen exposure at . Note the triangular features cover the entire surface due to conventional etching. The white arrows point to defects along the SLV etched lines.

Image of FIG. 4.
FIG. 4.

(a) SLV etched features found on tilted samples demonstrating eutectic flow. The Au line is positioned on the left side of this image. (b) Gold silicide islands grown on gold nanowires annealed on Si(111) substrates. Note the well defined shape of the silicide that is epitaxially grown on the Si(111) substrate.

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/content/aip/journal/apl/93/26/10.1063/1.3055606
2008-12-30
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: A solid-liquid-vapor mechanism for anisotropic silicon etching
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/26/10.1063/1.3055606
10.1063/1.3055606
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