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Broadening of the plasmon resonance due to plasmon-plasmon intermode scattering in terahertz high-electron-mobility transistors
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10.1063/1.3055610
/content/aip/journal/apl/93/26/10.1063/1.3055610
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/26/10.1063/1.3055610
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Figures

Image of FIG. 1.
FIG. 1.

Schematic of the transistor structure and coordinate system. The external terahertz radiation is incident normally from the top.

Image of FIG. 2.
FIG. 2.

(a) Measured plasmon photoresponse (Ref. 7) and (b) calculated terahertz absorption spectra for the fundamental gated plasmon mode in nanotransistor with a short gate vs the gate voltage for three different frequencies of incident terahertz radiation. The spectra in panel (a) are offset in vertical direction for clarity. The inset shows the plasmon resonance in the frequency domain for .

Image of FIG. 3.
FIG. 3.

Frequencies of the fundamental gated (solid curve) and ungated (dashed curves) plasmon resonances vs the gate voltage in the HEMT with the characteristic parameters of Ref. 7. Full squares indicate positions of the experimentally observed plasmon resonances in terahertz photoresponse (Ref. 7).

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/content/aip/journal/apl/93/26/10.1063/1.3055610
2008-12-30
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Broadening of the plasmon resonance due to plasmon-plasmon intermode scattering in terahertz high-electron-mobility transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/26/10.1063/1.3055610
10.1063/1.3055610
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