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Photoinduced reduction and pattern preservation of giant surface potential on tris(8-hydroxyquinolinato) aluminum(III) thin films
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The characteristics and mechanisms of photoinduced reduction in giant surface potential (gSP) on tris(8-hydroxyquinolinato) aluminum(III) thin films were investigated and discussed from the results of the reduction dependences on exposure time/intensity and the preservation of photopatterned gSP. The reduction dependences are explained well with numerical-model calculation of surface potential reduction due to the drift of photoexcited carriers assuming the Poole–Frenkel formula for electron mobility. The preservation of patterned gSPs suggests the existence of deep traps involved in the carrier-drift mechanism.
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