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Position of the lower and upper limits of the fundamental and excited confined states (measured from the top of GaAs VB) within the CB as they change with the spacer layer distance , for samples (a), (b), and (c) described in the main text. In figure (a) the dashed line is the lower boundary of the WL induced miniband. The position of the WL related miniband is essentially the same in structures (b) and (c) but cannot be distinguished easily from the QD related levels, as can be seen from Figs. 2(b) and 2(c).
Electronic structure across the path of the first BZ of vertically spaced QD layers of in all three samples. Horizontal arrows mark the bottom of the CB in QD and top of the CB in the barrier region.
Variation in the optical dipole matrix elements between and first five states in the VB , across the path of the first BZ of vertically spaced QD layers of in all three samples.
Intraband transversal electric (TE) and transversal magnetic components of the absorption spectra of three representative QD arrays discussed in the main text, calculated with . TE spectra of structure (a) for (dotted, solid, and dashed lines, respectively) demonstrate the “robustness” of the IB with respect to broadening.
Electron, hole, and reduced effective masses, optical dipole matrix element scaled to of GaAs bulk, and radiative time scaled to the radiative time of the virtual GaAs bulk with the same quasi-Fermi level separation as in structures considered.
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