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Abnormal domain switching in thin film capacitors
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) PFM image and (b) piezoresponse hysteresis loop obtained on bare surface of the PZT20/80 film. The bright and dark areas in (a) are poled by dc biases of and −10 V, respectively.

Image of FIG. 2.
FIG. 2.

(a) PFM amplitude and (b) phase images of the PZT60/40 film after dc poling. Large bright and dark areas in (b) are poled by dc biases of and −10 V, respectively.

Image of FIG. 3.
FIG. 3.

Piezoresponse images of the PZT52/48 film showing domain structures after (a) −15 V and (b) dc poling, respectively. Local piezoresponse hysteresis loops were obtained in (c) inversely poled grains and (d) in the normally switched region.

Image of FIG. 4.
FIG. 4.

[(a), (c), and (e)] PFM amplitude and [(b), (d), and (f)] phase images of the PZT52/48 capacitor acquired through the top electrode after application of [(a) and (b)] −5 V and [(c) and (d)] poling field. (e) Piezoresponse amplitude and (f) phase images of the same film area obtained while applying dc bias after poling. Local PFM amplitude and phase hysteresis loops were measured in the PZT52/48 capacitor in normally (g) switching areas and (h) areas exhibiting abnormal switching. Note inversion of phase loops in (g) and (h).


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Abnormal domain switching in Pb(Zr,Ti)O3 thin film capacitors