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Probing and modulating surface electron accumulation in InN by the electrolyte gated Hall effect
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10.1063/1.3062856
/content/aip/journal/apl/93/26/10.1063/1.3062856
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/26/10.1063/1.3062856
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Electrolyte gated Hall effect experimental setup. (b) Resistivity, (c) carrier concentration, and (d) mobility of an undoped InN film as function of potential measured with respect to the SCE. Solid lines are multilayer model fits.

Image of FIG. 2.
FIG. 2.

(a) A schematic qualitatively showing the variation in electron and hole density throughout the Mg-doped InN sample. (b) Sheet resistance, (c) sheet concentration, and (d) mobility of a Mg-doped sample as a function of potential measured with respect to SCE. Solid lines are multilayer model fits.

Image of FIG. 3.
FIG. 3.

PL spectra for the undoped sample under 0 and bias. The inset shows PL peak intensity vs applied bias. Biasing beyond −0.5 V yielded an irreversible PL intensity drop accompanied with a large leakage current (not shown).

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/content/aip/journal/apl/93/26/10.1063/1.3062856
2008-12-31
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Probing and modulating surface electron accumulation in InN by the electrolyte gated Hall effect
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/26/10.1063/1.3062856
10.1063/1.3062856
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