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Effect of Mo substitution on ferroelectric properties of thin films prepared by sol-gel method
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10.1063/1.3063121
/content/aip/journal/apl/93/26/10.1063/1.3063121
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/26/10.1063/1.3063121
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

XRD patterns of the BHTM thin films. The insets show the cross-sectional images: (a) BHT, (b) BHTM09, (c) BHTM15, (d) BHTM30, and (e) BHTM60.

Image of FIG. 2.
FIG. 2.

Dielectric properties of BHTM thin films as a function of frequency, and the inset shows the dielectric constant and loss at 1 MHz as a function of Mo content.

Image of FIG. 3.
FIG. 3.

hysteresis loops of BHTM thin films: (a) BHT, (b) BHTM09, (c) BHTM15, (d) BHTM30, and (e) BHTM60 films. The inset in (c) shows the fatigue behavior of the BHTM15 film.

Image of FIG. 4.
FIG. 4.

characteristics of the BHTM thin films.

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/content/aip/journal/apl/93/26/10.1063/1.3063121
2008-12-31
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of Mo substitution on ferroelectric properties of Bi3.6Ho0.4Ti3O12 thin films prepared by sol-gel method
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/26/10.1063/1.3063121
10.1063/1.3063121
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