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In situ strain measurements on GaN/AlGaN Schottky diodes with variable bias
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10.1063/1.3063125
/content/aip/journal/apl/93/26/10.1063/1.3063125
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/26/10.1063/1.3063125
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

High resolution x-ray rocking curve of GaN from AlGaN/GaN devices.

Image of FIG. 2.
FIG. 2.

Change in the rocking curve positions with applied (a) forward and (b) reverse biases for the GaN channel of the AlGaN/GaN Schottky diodes.

Image of FIG. 3.
FIG. 3.

The in-plane strain in the GaN channel with applied (a) forward bias and (b) reverse bias.

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/content/aip/journal/apl/93/26/10.1063/1.3063125
2008-12-31
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: In situ strain measurements on GaN/AlGaN Schottky diodes with variable bias
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/26/10.1063/1.3063125
10.1063/1.3063125
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