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Ambipolar transport behavior in /pentacene hybrid heterostructure and their complementary circuits
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/content/aip/journal/apl/93/3/10.1063/1.2949872
2008-07-21
2014-11-26

Abstract

In this Letter, ambipolar transport properties of a bilayer of and a pentacene heterostructure have been realized. While thin film transistors exhibited a -channel behavior, pentacene presumed -channel characteristics on bare substrates. However, when a bilayer of /pentacene was realized on the gate dielectrics, the hybrid structure exhibited both - and -channel conductions, depicting an ambipolar transistor behavior. When two identical ambipolar transistors were integrated to establish an inverter structure, a voltage gain of 10 was obtained. The results indicate that these heterostructures can be utilized for the complementary circuits.

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Scitation: Ambipolar transport behavior in In2O3/pentacene hybrid heterostructure and their complementary circuits
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/3/10.1063/1.2949872
10.1063/1.2949872
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