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Threshold reduction , relative to unpolarized electron injection in the same device, for lasers dominated by spin-selective Shockley–Read, non-spin-selective S-R, radiative, and Auger recombination processes vs. electron spin polarization in the active region. The solid lines show results of the detailed QW model, dotted lines correspond to the first simple model , and dashed lines are from the second simple model . The assumed threshold gain is 0.01% per QW. While each of these results assumes recombination via a single process, in actual lasers the decay is governed by some combination of the processes.
Threshold reduction vs. threshold gain for the same four recombination mechanisms considered in Fig. 1 and the cases of full spin polarization (solid lines) and (dashed lines).
Material gain vs. majority-spin carrier density for unpolarized and fully spin-polarized electrons in the model QW active region. The same curves for a much higher hole DOS (multiplied by a factor of 3) are also shown.
Threshold reduction when dominated by radiative recombination for the nominal hole DOS as well as multiplied by a factor of , 3, and 6, as a function of the required threshold gain for fully spin-polarized electrons in the active region.
Maximum threshold reduction for a fully spin-polarized electron population using the two simple models and the detailed QW gain calculation, and assuming that the threshold current density is dominated by the Shockley–Read (with and without spin selectivity), radiative, and Auger mechanisms.
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