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Epitaxy of single crystalline films on Si(111)
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10.1063/1.2958227
/content/aip/journal/apl/93/3/10.1063/1.2958227
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/3/10.1063/1.2958227
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) scan. The intensity close to is due to the strong peak as well as fringes due to the film. The intensity close to is governed by the film. (b) CTR analysis of the film close to . The positions of Bragg peaks due to bulk as well as are also marked.

Image of FIG. 2.
FIG. 2.

In-plane scan. Bragg peaks of the film and the Si substrate are at and , respectively. Si CTRs are at at and . Positions of bulk and are marked.

Image of FIG. 3.
FIG. 3.

scan. All peaks and fringes are due to -oriented except the strong peak at due to Si.

Image of FIG. 4.
FIG. 4.

Model for with silicate film at the interface and lateral phase separation of (left) and (right).

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/content/aip/journal/apl/93/3/10.1063/1.2958227
2008-07-24
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Epitaxy of single crystalline PrO2 films on Si(111)
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/3/10.1063/1.2958227
10.1063/1.2958227
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