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(a) Growth rate of ALD on GaAs at vs precursor pulse time. (b) Dependence of ALD growth rate on temperature. The pulse time for TMA and IPA are both .
HRTEM image of the interface between GaAs substrate and film grown at . The TMA and IPA pulse times were both .
XPS depth spectra of (a) As . (b) Al core level from surface to the interface.
(a) characteristics of in situ MOS capacitor measured at different frequencies from . (b) Interfacial defect density vs bandgap energy near the midgap, determined by the conductance-frequency method from the same in situ capacitors.
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