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In situ metal-organic chemical vapor deposition atomic-layer deposition of aluminum oxide on GaAs using trimethyaluminum and isopropanol precursors
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10.1063/1.2960574
/content/aip/journal/apl/93/3/10.1063/1.2960574
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/3/10.1063/1.2960574
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Growth rate of ALD on GaAs at vs precursor pulse time. (b) Dependence of ALD growth rate on temperature. The pulse time for TMA and IPA are both .

Image of FIG. 2.
FIG. 2.

HRTEM image of the interface between GaAs substrate and film grown at . The TMA and IPA pulse times were both .

Image of FIG. 3.
FIG. 3.

XPS depth spectra of (a) As . (b) Al core level from surface to the interface.

Image of FIG. 4.
FIG. 4.

(a) characteristics of in situ MOS capacitor measured at different frequencies from . (b) Interfacial defect density vs bandgap energy near the midgap, determined by the conductance-frequency method from the same in situ capacitors.

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/content/aip/journal/apl/93/3/10.1063/1.2960574
2008-07-21
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: In situ metal-organic chemical vapor deposition atomic-layer deposition of aluminum oxide on GaAs using trimethyaluminum and isopropanol precursors
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/3/10.1063/1.2960574
10.1063/1.2960574
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